We use metal-catalyzed chemical vapor deposition for the growth of SiGe alloy nanowires, Si and Ge heterojunction nanowires, and Si nanowires with chemical doping, which are potentially useful for electronic, optoelectronic, and thermoelectric applications.

Atomic layer deposition is an excellent method for conformal growth of thin films with uniform thickness. We use this method to deposit oxide layers, e.g. TiO₂ and Al₂O₃, on the surface of nanostructures for making heterojunction nanomaterials and electronic devices.

Scaling up the growth of high- quality graphene is essential for its future applications in transparent electrodes for display devices. We investigate the mechanism and perfection of graphene growth on metal surfaces, and meanwhile developing methods to integrate graphene with electronic devices.