3/17 Speech

• 
• 

會員評等：  / 0

詳細內容

上層分類：News

分類：Speeches

建立於 2014-04-01, 週二 12:16

最近更新於 2014-04-10, 週四 10:51

發佈於：2014-04-01, 週二 12:18

點擊數：3366

Speaker: Prof. C. C. Leu
Topic: Solution-Processed Nanocrystal Memory

Speaker: Prof. C. C. Leu

Organization: Associate Professor, Department of Chemical and Materials Engineering, National University of Kaohsiung

Topic: Solution-Processed Nanocrystal Memory

Time: 10:20 AM ~ 12:10 PM, 2014.3.17

Location: Room 203, College of Engineering

Synopsis:
An all-solution processed metal–oxide–semiconductor (MOS) capacitor structure containing gold (Au) nanoparticles (NPs) within HfO2 high-κ oxide has been successfully fabricated through a spin-coating method. The ultra-thin (<10 nm) HfO2 high-κ tunnel oxide layer was prepared by sol-gel process and showed good electrical properties, which were critical to superior memory property of the MOS structure. The colloidal synthesized Au NPs (3-5 nm) were self-assembled to 3-aminopropyltrimethoxysilane (APTMS) modified HfO2 tunnel oxide. With the spin coating process, Au NPs can be fabricated ontoHfO2 with a high packing density of ~1×1012cm-2 in a short processing time. Finally, aSi/HfO2/Au NPs/HfO2 memory structure was constructed after the substrate had been covered with a sol-gel-derived HfO2 control oxide layer (~13 nm). This all-solution processed MOS structure showed good memory effect and retention properties. This study indicates that it is appropriate to utilize the spin coating process in nanocrystal memory applications.