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學術交流

演講

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智匯鴻海,引領未來

Hits:27

講座主題:【智匯鴻海,引領未來】移動裝置的前瞻技術與智能發展趨勢
講座時間:2021/2/2()下午14:00-17:00
講座地點:國立臺灣大學理學院化學系 A121教室

高度數字化的時代,移動裝置成為新時代重要的載體,本講座帶你一窺究竟iPhone內部複雜的結構,創新的製程技術,最終集結功能複雜化與外觀精品化於一身;以科學基礎為基底,讓在學校就讀不同科系的大家,都可以成為未來iPhone工程師的一員!

全民AI的時代,代表AI技術(大數據分析、計算機視覺、數據挖掘、專家系統等等)的演進與機會;然而它是不是被過度炒熱了?從研究室的技術跨度到製造業大規模應用是否真的可行?對於已經進入或者即將準備踏入這個領域的你,在本次講座中,應該了解的大規模製造業AI應用之真實現況,一次打包帶走!

講座講者:

n鴻海科技集團CAA-iPEBG事業群/研發中心iLab 中心主管 洪辰諭博士

1. 鴻海工業互聯網投資辦投資項目立項委員
2. 鴻海工業互聯網對外科技服務華南區總負責人
3. Umass, MIT美國麻省理工學院訪問學者/ Exxon Mobile PLA研發案研究員
4. 國立台灣大學化學所博士

n鴻海科技集團CAA-iPEBG 事業群/智能化系統開發管理中心主管吳振廷博士

1. 鴻海CAA-iPEBG 事業群機構件智慧製造總負責人
2. 鴻海CAA-iPEBG 事業群製造工業AI方案開發導入總負責人
3. UC Berkeley美國加州柏克萊大學訪問學者
4. 國立清華大學工業工程與工程管理博士

講座主題:

n手機迭代技術研發與工匠藝術:學界與業界的無縫接軌
Ø1+1<2 精品機構件的象牙塔
Ø未來精密製造的趨勢
ØiPhone機構件的現在、過去、和未來

Ø iPhone研發工程師特質

n工業王國的智能製造:我們如何實現不可能
Ø大規模產業化的智慧製造難題
ØiPhone機構件導入智慧製造的核心方向
ØiPhone機構件智慧製造的過去、現在及未來
ØAI主宰製造業的可能與機會

主辦單位:鴻海科技集團CAA-iPEBG事業群
報名連結:https://tinyurl.com/ycc8nwyx報名與現場交流即有機會獲得千元以上精美贈品!

 

12/28 專題演講公告

Hits:149

演講人蔡松釗先生

服務單位中國鋼鐵公司

演講題目開放式創新中鋼產學合作模式其中會以與學校合作發展出AHSS輕量化鋼材及電動汽車馬達用矽鋼片為案例

演講時間109年12月28日(星期一)早上10點20分

演講地點工綜館203國際演講廳

個人學歷

 

畢業學校

國別

主修學門系所

學位

中山大學

中華民國

管理學院 EMBA

碩士

密西根大學

美國

航空工程學系

博士候選人

清華大學

中華民國

動力機械工程學系

碩士

清華大學

中華民國

動力機械工程學系

12/21 專題演講公告

Hits:363

演講人周苡嘉博士

服務單位交通大學電子物理系

演講題目Direct Growth of Flexible GaN Film via van der Waals Epitaxy

演講時間109年12月21日(星期一)早上10點20分

演講地點工綜館203國際演講廳

個人學歷

國立清華大學材料科學與工程學系學士 (2006)

美國加州大學洛杉磯分校材料科學與工程學系博士 (2010)

 個人經歷

國立交通大學電子物理系副教授(現職)

國立交通大學電子物理系助理教授

美國布魯克海文國家實驗室電子顯微鏡組客座科學家 (2012/5-2012-8)

IBM華生研究中心物理科學部博士後研究員 (2010-2012)

 

演講摘要 A flexible gallium nitride thin film was obtained on mica through van der Waals epitaxy. A hydride vapor phase epitaxy was applied to fabricate such flexible GaN thin film directly on substrate suing an optimized two-step growing process to form LT-GaN and HT-GaN sequentially. The interfacial stress caused by the mismatches of thermal expansion coefficient and lattice were significantly reduced via van der Waals epitaxy and the proposed two-step growth. A critical (minimum) growth pressure was found to grow the HT-GaN. The optical performance was controlled by interface and surface roughness. For poor-quality LT-GaN, it quickly decomposed during HT-GaN growth and induced high density of defects near the LT-GaN/HT-GaN interface. The defects then caused the GaN film non-transparent. The surface roughness also controlled the transmittance. In the measurement region, the average transmittance decreased linearly as the GaN surface became rougher. A reliability test was approached where the strong bending caused slight PL peak shift, but did not significantly reduced the peak intensity. Thus, such direct grown GaN film on F-mica substrate can be evaluated as a reliable optical device.

12/14 專題演講公告

Hits:172

演講人任先生

服務單位普羅森公司Phrozen

演講題目Phrozen創業至走向國際看台灣3D列印的產業發展  

演講時間109年12月14日(星期一)早上10點20分

演講地點工綜館203國際演講廳

個人學歷

國立台灣大學/材料科學暨工程學研究所/碩士

國立台灣大學/材料科學暨工程學系/學士

建國中學/普通科/高中

個人經歷

普羅森科技(Phrozen)/Business/CEO(現職)

台灣蘇威(Solvay)/Customer Technology Development/Engineer

台灣羅圖(Roctool)/Business Development/Manager, Asia

台灣科萊恩(Clariant)/Sales/Sales Engineer, South East Asia

台灣杜邦(DuPont)工程塑料部/Marketing/Marketing Specialist, Greater China

台灣杜邦(DuPont)電子材料部/Application Technology Development/Application Engineer

演講摘要

介紹3D列印發展趨勢和台灣3D列印現況,並由Phrozen從無到有的創業經驗分享3D列印的產業現況。

 

12/07 專題演講公告

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演講人羅承慈 博士

服務單位中山大學材光系

演講題目Synthesis and Applications of Functional Cross-linked Core-shell Block Copolymers

演講時間109年12月07日(星期一)早上10點20分

演講地點工綜館203國際演講廳

個人學歷

國立台灣大學/化學工程學系/博士

長庚大學/化工與材料工程研究所/碩士

長庚大學/化工與材料工程學系/學

個人經歷

國立中山大學/材料與光電科學學系/助理教授 (現職)

Yamagata University(日本山形大學)/Department of Organic Materials Science/助理教授

中原大學/化學工程學系/助理教授

演講摘要

A series of high-performance cross-linked core-shell block copolymers as charge-storage or ion-conductive materials will be introduced. We have been studied in the functional core-shell block-copolymer nanoparticles with cross-linking conjugating cores surrounding by hydrophilic shells via Suzuki-coupling reaction, while the nanoparticles with cross-linked cores using triazole-based comprising several ion-conductive functional groups, such as the zwitterionic groups or triazolium groups with salts or ion liquids were also studied. The nanoparticles presented uniform size distribution and well-defined core-shell nanostructure, while the intra-molecular charge transfer was effectively enhanced due to the incorporation of conjugating groups. Both the conjugating-core sizes and π-π interaction of the prepared nanoparticles were effectively controlled by the block composition. Moreover, the studied transistor memory devices embedded with these solution-process-able nanoparticles exhibited non-volatile flash-type memory characteristics and presented both amphiphilic carrier-trapping abilities. For those ionic-conductive nanoparticles, the highest ionic conductivities of 1.26 × 10–3 S/cm were achieved at 90 oC with the presence of 30 wt.% ionic liquid, which are due to the enhanced segmental molecular motion and the formation of a preferable ionic-conductive path composed of the hydrophobic ionic-liquid based shell with the added ionic liquid. We believe this achievement provides multiple applications of cross-linked nanoparticles as a promising candidate for both charge-storage and ion-conductive materials in the future organic technology.

11/30 專題演講公告

Hits:438

演講人胡璧合 博士

服務單位臺灣大學電機系

演講題目Ferroelectric FET Non-volatile Memory

演講時間109年11月30日(星期一)早上10點20分

演講地點工綜館203國際演講廳

個人學歷

國立交通大學/電子研究所/博士

國立交通大學/電子研究所/碩

國立交通大學/材料科學與工程學系/學

個人經歷

國立台灣大學/電機工程學系/副教授 (現職)

國立中央大學/電機工程學系/副教授

國立中央大學/電機工程學系/助理教授

The Australian National University/Department of Electronic Materials Engineering/Visiting Scholar

University of California, Berkeley/Department of Electrical Engineering and Computer Sciences/Visiting Scholar

國立交通大學/智慧型記憶體及晶片系統實驗室/助理研究員

演講摘要Artificial intelligence (AI) and Internet-of-Things (IoT) play a vital role in the future. For the von Neumann architecture, communication bottleneck between memory and processors becomes one of the most series problems due to low data throughput and high-power consumption. Non-volatile memory (NVM) based synapse and logic-in-memory circuit have been proposed to alleviate these problems. Ferroelectric Field-Effect-Transistor (FeFET) has been explored actively for emerging non-volatile memory and neuromorphic computing due to its high compatibility with CMOS platform. In this talk, I will introduce the operation principles and the challenges of FeFET memory. We have proposed a novel split-gate FeFET (SG-FeFET) for non-volatile memory and neuromorphic applications, which significantly improves the energy efficiency and reduces the power consumption. The reliability and endurance of SG-FeFET memory have also been improved owing to the lowered write voltage. SG-FeFET as a synaptic device has also been investigated including the non-linearity, asymmetry, and dynamic range of conductance updates.

11/23 專題演講公告

Hits:371

演講人 莊家翔 博士

服務單位中原大學電子工程系

演講題目Investigations for magnetoresistance of ultralow-hole-density monolayer epitaxial graphene grown on SiC systems

演講時間109年11月23日(星期一)早上10點20分

演講地點工綜館203國際演講廳

個人學歷

國立台灣大學/物理所/博士

個人經歷

中原大學/電子工程學系/助理教授 (現職)

演講摘要

In this talk, I focus on detailed measurements on ultralow-density p-type monolayer epitaxial graphene, which has yet to be extensively studied. The measured resistivity ρxx shows insulating behavior in the sense that ρxx decreases with increasing temperature T over a wide range of T (1.5 K ≤ T ≤ 300 K). The crossover from negative magnetoresistivity (MR) to positive magnetoresistivity at T = 40 K in the low-field regime is ascribed to a transition from low-T quantum transport to high-T classical transport. For T ≥ 120 K, the measured positive MR ratio [ρxx(B) − ρxx(B = 0)]/ρxx(B = 0) at B = 2 T decreases with increasing T, but the positive MR persists up to room temperature. Our experimental results suggest that the large MR ratio (~100% at B = 9 T) is an intrinsic property of ultralow-charge-density graphene, regardless of the carrier type. This effect may find applications in magnetic sensors and magnetoresistance devices.
Keywords: epitaxial graphene, resistance standard, magnetoresistance, quantum hall

11/16 專題演講公告

Hits:424

演講人徐斌睿 博士

服務單位清華大學物理系

演講題目:Proximity-Effect-Induced Superconductivity in Monatomic Ni-Pb Alloy and Ni Nanoislands

演講時間109年11月16日(星期一)早上10點20分

演講地點工綜館203國際演講廳

個人學歷

國立中央大學 / 物理系 / 碩士

國立臺灣大學 / 物理所 / 博士

個人經歷

國立清華大學 / 助理教授 (現職)

德國福茲堡大學/博士後研究

德國漢堡大學/博士後研究

演講摘要

Proximity effect facilitates the penetration of Cooper pairs that permits superconductivity in normal metal with reduced dimensionality, offering a promising approach to develop novel quantum phenomena and emergent phases of matters in hybrid magnetic/superconducting nanostructures. Here, we have investigated proximity-induced superconductivity in monatomic Ni-Pb alloy and Ni nanoislands grown on Pb(111) by scanning tunneling microscopy/ spectroscopy (STM/STS) combined with theoretical calculations. Through elemental Pb superconducting substrate, tunneling conductance spectra have resolved an induced superconductivity with a gap size Δ about 0.85 meV in Ni-Pb alloy, which is about 0.11 meV smaller than Pb(111). On the contrary, Ni nanoislands with honeycomb lattice display a superconductivity gap with the same size of the Pb(111) substrate. From spatially monotonic decrease of Δ across the interface between Ni-Pb alloy and Pb(111), the decay length ξL about 5 nm has been extracted. According to the Usadel fittings and the BdG model, a weak ferromagnetism with an effective temperature about 6 ~ 15 K explains such rather short decay length as well as reduced superconductivity gap in the Ni-Pb surface alloy. As for honeycomb-structured Ni nanoislands, asymmetric edge scattering of surface electrons on Pb(111) has been revealed and further theoretical insights on the details of strong suppression of backscattering at the bearded type of edges are currently in progress.

2020-11-16-Speech

11/02 專題演講公告

Hits:284

者:莊天明 博士

演講題目:Visualizing Emergent Superconductivity by Spectroscopic Imaging - Scanning Tunneling Microscopy