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建立於 2014-04-01, 週二 12:10

最近更新於 2014-04-10, 週四 10:51

發佈於：2014-04-01, 週二 12:12

點擊數：3634

Speaker: Prof. Pei-Cheng Ku
Topic: Strain Engineering in Nitride Semiconductor

Speaker: Prof. Pei-Cheng Ku

 

Organization: Associate Professor, Department of Electrical Engineering and Computer Science, University of Michigan at Ann Arbor

Topic: Strain Engineering in Nitride Semiconductor

Time: 10:20 AM ~ 12:10 PM, 2014.3.3

Location: Room 203, College of Engineering

Synopsis:
Strain alters both electronic and optical properties of semiconductors. Properly controlled, strain can greatly improve device performance. For example, biaxial strain in semiconductor heterostructures lowers the effective mass of their valence band and enables faster transistors and lower-threshold lasers. Poorly controlled, strain increases defect density and leads to unwanted properties. For example in III-nitride semiconductors, strain induces an anisotropic piezoelectric field, which is responsible for efficiency droop in LEDs, difficulties in achieving green emitters, and abnormally large linewidths from quantum dot emission. Understandably, major research and development efforts have been invested in containing the strain in nitride semiconductors. However, if properly engineered, strain can also enable new frontiers in III-nitride photonics. Specifically, we will describe our progress in realizing a chip-scale polarization-controlled single photon source for quantum cryptography and an ultracompact RGB (full-color) light engine for lighting, display, and imaging applications.