11/30 Seminar Speech

• 
• 

會員評等：  / 0

詳細內容

上層分類：News

分類：Speeches

建立於 2020-11-23, 週一 17:07

最近更新於 2021-12-15, 週三 14:35

發佈於：2020-11-23, 週一 17:17

點擊數：4773

Speaker：Professor PI-HO HU

Organization：Department of Electrical Engineering, National Taiwan University  

Topic：Ferroelectric FET Non-volatile Memory

 Date：10:20 am , 2020.11.30

Location：Room 203, College of Engineering

Abstract；Artificial intelligence (AI) and Internet-of-Things (IoT) play a vital role in the future. For the von Neumann architecture, communication bottleneck between memory and processors becomes one of the most series problems due to low data throughput and high-power consumption. Non-volatile memory (NVM) based synapse and logic-in-memory circuit have been proposed to alleviate these problems. Ferroelectric Field-Effect-Transistor (FeFET) has been explored actively for emerging non-volatile memory and neuromorphic computing due to its high compatibility with CMOS platform. In this talk, I will introduce the operation principles and the challenges of FeFET memory. We have proposed a novel split-gate FeFET (SG-FeFET) for non-volatile memory and neuromorphic applications, which significantly improves the energy efficiency and reduces the power consumption. The reliability and endurance of SG-FeFET memory have also been improved owing to the lowered write voltage. SG-FeFET as a synaptic device has also been investigated including the non-linearity, asymmetry, and dynamic range of conductance updates.