11/30 專題演講公告

演講人胡璧合 博士

服務單位臺灣大學電機系

演講題目Ferroelectric FET Non-volatile Memory

演講時間109年11月30日(星期一)早上10點20分

演講地點工綜館203國際演講廳

個人學歷

國立交通大學/電子研究所/博士

國立交通大學/電子研究所/碩

國立交通大學/材料科學與工程學系/學

個人經歷

國立台灣大學/電機工程學系/副教授 (現職)

國立中央大學/電機工程學系/副教授

國立中央大學/電機工程學系/助理教授

The Australian National University/Department of Electronic Materials Engineering/Visiting Scholar

University of California, Berkeley/Department of Electrical Engineering and Computer Sciences/Visiting Scholar

國立交通大學/智慧型記憶體及晶片系統實驗室/助理研究員

演講摘要Artificial intelligence (AI) and Internet-of-Things (IoT) play a vital role in the future. For the von Neumann architecture, communication bottleneck between memory and processors becomes one of the most series problems due to low data throughput and high-power consumption. Non-volatile memory (NVM) based synapse and logic-in-memory circuit have been proposed to alleviate these problems. Ferroelectric Field-Effect-Transistor (FeFET) has been explored actively for emerging non-volatile memory and neuromorphic computing due to its high compatibility with CMOS platform. In this talk, I will introduce the operation principles and the challenges of FeFET memory. We have proposed a novel split-gate FeFET (SG-FeFET) for non-volatile memory and neuromorphic applications, which significantly improves the energy efficiency and reduces the power consumption. The reliability and endurance of SG-FeFET memory have also been improved owing to the lowered write voltage. SG-FeFET as a synaptic device has also been investigated including the non-linearity, asymmetry, and dynamic range of conductance updates.