3/30(一)專題演講公告

演講人黃嘉彥   博士

服務單位工業技術研究院電光系統所

演講題目Strain Engineering in AlGaN / AlN Epitaxial System

演講時間109330(星期一)早上1020

演講地點工綜館203國際演講廳

個人學歷

美國加州大學聖塔芭芭拉分校 / 材料所 / 博士

國立臺灣大學 / 材料科學與工程學系 / 學士

個人經歷

工業技術研究院 / 電光系統所 / 工程師

國立交通大學 / 光電工程學系 / 助理研究員

晶元光電 / 研發部 / 資深工程師

臺積固態照明 / 研發部 / 主任工程師

演講摘要

AlGaN / AlN-based epitaxy are essential materials for achieving compact, efficient, and mercury-free deep-UV light sources for sterilization and biomedical applications. However, the absence of high-quality and cost-effective AlGaN / AlN template hindered the commercialization. In 2015, Miyake et al. firstly demonstrated high-temperature annealing to achieve high-quality AlN template on sapphire substrate with a reasonable cost. However, its further utilization to real light-emitting diodes was unexpectedly difficult. In this report, we’ll discuss the origin of strain in the AlGaN / AlN epitaxy and its impact to the materials growth and device performance. An active measure to engineer the strain status in the AlGaN / AlN system will also be revealed. With a proper Si-doping and thickness control in regrown AlN, it’s possible to overcame the inherent compressive strain in the annealed AlN template.

出席學生

僅學號末一碼為偶數同學須出席(學號末一碼為奇數同學請至CEIBA及NTU COOL線上學習)

20200330-1