Prof. Chi-Feng Pai’s Research Article is Now Available on IEEE Electron Device Letters

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分類：Honors

建立於 2018-07-31, 週二 14:19

最近更新於 2019-08-22, 週四 15:21

發佈於：2018-07-31, 週二 14:22

點擊數：5367

The research topic "Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-On-MgO-Barrier Spin-Orbit Torque MRAM Cell" which was conducted by Prof. Chi-Feng Pai, now is available on IEEE Electron Device Letters.

 

Reference: Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-On-MgO-Barrier Spin-Orbit Torque MRAM Cell, IEEE Electron Device Letters, Early Access (2018). DOI: 10.1109/LED.2018.2856518

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