Prof. Chi-Feng Pai’s Research Article is Now Available on IEEE Electron Device Letters

• 
• 

User Rating:  / 0

PoorBest 

Details

Parent Category: News

Category: Honors

Created on Tuesday, 31 July 2018 14:19

Last Updated on Thursday, 22 August 2019 15:21

Published on Tuesday, 31 July 2018 14:22

Hits: 8287

The research topic "Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-On-MgO-Barrier Spin-Orbit Torque MRAM Cell" which was conducted by Prof. Chi-Feng Pai, now is available on IEEE Electron Device Letters.

 

Reference: Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-On-MgO-Barrier Spin-Orbit Torque MRAM Cell, IEEE Electron Device Letters, Early Access (2018). DOI: 10.1109/LED.2018.2856518

• < Prev
• Next >