12/21 專題演講公告
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- 上層分類：系所公告
- 分類：演講
- 建立於 2020-12-18, 週五 09:54
- 最近更新於 2021-02-05, 週五 09:05
- 發佈於：2020-12-18, 週五 10:34
- 點擊數：2005
演講人：周苡嘉博士
服務單位：交通大學電子物理系
演講題目：Direct Growth of Flexible GaN Film via van der Waals Epitaxy
演講時間：109年12月21日(星期一)早上10點20分
演講地點：工綜館203國際演講廳
個人學歷：
國立清華大學材料科學與工程學系學士 (2006)
美國加州大學洛杉磯分校材料科學與工程學系博士 (2010)
個人經歷：
國立交通大學電子物理系副教授(現職)
國立交通大學電子物理系助理教授
美國布魯克海文國家實驗室電子顯微鏡組客座科學家 (2012/5-2012-8)
IBM華生研究中心物理科學部博士後研究員 (2010-2012)
演講摘要： A flexible gallium nitride thin film was obtained on mica through van der Waals epitaxy. A hydride vapor phase epitaxy was applied to fabricate such flexible GaN thin film directly on substrate suing an optimized two-step growing process to form LT-GaN and HT-GaN sequentially. The interfacial stress caused by the mismatches of thermal expansion coefficient and lattice were significantly reduced via van der Waals epitaxy and the proposed two-step growth. A critical (minimum) growth pressure was found to grow the HT-GaN. The optical performance was controlled by interface and surface roughness. For poor-quality LT-GaN, it quickly decomposed during HT-GaN growth and induced high density of defects near the LT-GaN/HT-GaN interface. The defects then caused the GaN film non-transparent. The surface roughness also controlled the transmittance. In the measurement region, the average transmittance decreased linearly as the GaN surface became rougher. A reliability test was approached where the strong bending caused slight PL peak shift, but did not significantly reduced the peak intensity. Thus, such direct grown GaN film on F-mica substrate can be evaluated as a reliable optical device.