3/30 Seminar Speech

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Parent Category: News

Category: Speeches

Created on Monday, 23 March 2020 16:40

Last Updated on Monday, 30 March 2020 13:17

Published on Monday, 23 March 2020 16:43

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Speaker: Dr. Jia-Yan Huang

Topic: Strain Engineering in AlGaN / AlN Epitaxial System

Speaker：Dr. Jia-Yan Huang

Organization：Industrial Technology Research Institute

Topic：Strain Engineering in AlGaN / AlN Epitaxial System 

Date：10:20 , 2020.3.30

Location：Room 203, College of Engineering

Education：

University of California,Santa Barbara (U.S.A.) / Materials / PhD

National Taiwan University / Department of Materials Science and Engineering / BS

Work Experience：

Industrial Technology Research Institute / Engineer

National Chiao Tung University / Department of Photonics / Assistant Researcher

Abstract：

AlGaN / AlN-based epitaxy are essential materials for achieving compact, efficient, and mercury-free deep-UV light sources for sterilization and biomedical applications. However, the absence of high-quality and cost-effective AlGaN / AlN template hindered the commercialization. In 2015, Miyake et al. firstly demonstrated high-temperature annealing to achieve high-quality AlN template on sapphire substrate with a reasonable cost. However, its further utilization to real light-emitting diodes was unexpectedly difficult. In this report, we’ll discuss the origin of strain in the AlGaN / AlN epitaxy and its impact to the materials growth and device performance. An active measure to engineer the strain status in the AlGaN / AlN system will also be revealed. With a proper Si-doping and thickness control in regrown AlN, it’s possible to overcame the inherent compressive strain in the annealed AlN template.