User Rating: / 0
- Details
-
Parent Category: News
-
Category: Honors
-
Created on Tuesday, 31 July 2018 14:19
-
Last Updated on Thursday, 22 August 2019 15:21
-
Published on Tuesday, 31 July 2018 14:22
-
Hits: 5441
The research topic "Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-On-MgO-Barrier Spin-Orbit Torque MRAM Cell" which was conducted by Prof. Chi-Feng Pai, now is available on IEEE Electron Device Letters.
Reference: Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-On-MgO-Barrier Spin-Orbit Torque MRAM Cell, IEEE Electron Device Letters, Early Access (2018). DOI: 10.1109/LED.2018.2856518